Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of hi...

Consistently low subthreshold swing in carbon nanotube transistors using lanthanum oxide

While a few singular reports have demonstrated carbon nanotube (CNT) transistors with subthreshold swings (SS) close to the theoretical limit (60 mV/decade), the majority of devices have more than double the target swing. Here, we show that a low temperature lanthanum oxide dielectric is able to yield a consistently and reproducibly low SS, with an average of 73 mV/decade and a low of 63 mV/dec...

Fundamental Tradeoff between Conductance and Subthreshold Swing Voltage for Barrier Thickness Modulation in Tunnel Field Effect Transistors

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Removing the current-limit of vertical organic field effect transistors

Theoretical study of graphene nanoribbon field-effect transistors

Carbon nanoribbons (CNRs) have been recently experimentally and theoretically investigated for different device applications due to their unique electronic properties. In this work, we present a theoretical study of the electronic structure, e.g. bandgap and density of states, of armchair carbon nanoribbons, using both, simple analytical solutions and numerical solutions based on a πorbital tig...